zirconium triselenide belongs to the group-iv transition l trichalcogenides. this is the only commercially available zrse3 crystals in the market, and our crystals have been engineered to attain rather low record defect density (1e9-1e10cm-2) to yield environmentally stable zrse3 crystals. zrse3 crystals exhibit semillic behavior with charge density waves (cdw) phenomena and even possess a superconducting response at low temperatures. zrse3 behaves semiconducting as well as llic depending on the physical thickness of the material, and exhibit cdws. recent studies have proposed zrse3 as fermoelectric [1], high carrier mobility 2d transistors [2], new ir material [3-4], as well as polarized emission material [4]. in a typical order, a large number of layered needle like sheets are contained in a capsule sealed under argon environment. the layers are stacked together via van der waals interactions and can be exfoliated into thin 2d layers.

　　growth method matters> flux zone or cvt growth method? contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-pl emission, and lower optical absorption. flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdw crystals. this method distinguishes itself from chemical vapor transport (cvt) technique in the following regard: cvt is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1e11 to 1e12 cm-2 range. in contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1e9 - 1e10 cm-2. during check out just state which type of growth process is preferred. unless otherwise stated, 2dsemiconductors ships flux zone crystals as a default choice.

　　properties of cdw zrse3 crystals

　　related literature

　　[1] "zrse3-type variant of tis3: structure and thermoelectric properties"; chem. mater 2014, 26 (19), pp 5585–5591

　　[2] "titanium trisulfide monolayer: theoretical prediction of a new direct-gap semiconductor with high and anisotropic carrier mobility"; angew chem int ed engl. 2015 jun 22;54(26):7572-6 [link]

　　[3] single layer of mx3 (m = ti, zr; x = s, se, te): a new platform for nano-electronics and optics; phys.chem.chem.phys 2015, 17, 18665

　　[4] angle resolved vibrational properties of anisotropic transition l trichalcogenide nanosheets; nanoscale, 2017,9, 4175-4182